BPhen (Bathophenanthroline)

CAS Number 1662-01-7

Electron / Hole Transport Layer Materials, High Purity Sublimed Materials, Perovskite Interface Materials, Perovskite Materials, Semiconducting Molecules

MSDS

BPhen (Bathophenanthroline) CAS 1662-01-7

Bathophenanthroline, HBL material

Used to enable ohmic contact to any electrode when doped with Lithium

BPhen (CAS number 1662-01-7) is widely used as a hole-blocking or exciton-blocking layer due to its wide energy gap and high ionisation potential.

The phenanthroline unit is small, rigid, and planar, with extended π-electrons and short hopping lengths that facilitate electron mobility. The electron mobility of BPhen is about 5 × 10^-4 cm²V^-1 s^-1, which is about two orders of magnitude higher than that of Alq₃.

When doped with lithium, BPhen:Li is an excellent electron-transport material, and is often used as an electron-injection layer to enable ohmic contact to any electrode -- without the need to consider the work function alignments.

General Information

CAS number	1662-01-7
Chemical formula	C₂₄H₁₆N₂
Molecular weight	332.40 g/mol
Absorption	λ_max 272 nm (in THF)
Fluorescence	λ_em 379 nm (in THF)
HOMO/LUMO	HOMO = 6.4 eV; LUMU = 3.0 eV
Synonyms	Bathophenanthroline 4,7-Diphenyl-1,10-phenanthroline
Classification / Family	Hole-blocking layer (HBL), Electron-injection layer (EIL), OLEDS, Organic photovoltaics, Perovskite solar cells.

Product Details

Purity	Sublimed > 99.0%
Melting point	218-220 °C (lit.)
Appearance	Off-white to pale yellow crystals

Chemical Structure

bphen Bathophenanthroline — Chemical structure of bathophenanthroline (BPhen)

Device Structure(s)

Device structure	ITO/2-TNATA:33% WO₃ (100 nm)/NPB (10 nm)/Alq₃ (30 nm)/Bphen (20 nm)/BPhen: 2% Cs (10 nm)/Al (150 nm) [1]
Colour	Green
Operating Voltage for 100 cd/m²	3.1 V
Current Efficiency for 20 mA/cm²	4.4 cd/A
Power Efficiency for 20 mA/cm²	3.3 lm W⁻¹

Device structure	ITO/TAPC:MoO_x (10 nm, 15 wt.%)/TAPC(35 nm)/TcTa:Ir(BT)₂(acac) (5 nm, 4 wt.%)/26DCzPPy:FIrpic (5 nm, 15 wt.%)/26DCzPPy:Ir(BT)₂(acac) (5 nm, 4 wt.%)/BPhen (40 nm)/Cs₂CO₃ (1 nm)/Al (100 nm) [2]
Colour	White
Max. EQE	13.2%
Max. Current Efficiency	35.0 cd/A
Max. Power Efficiency	30.6 lm W⁻¹

Device structure	Si/SiO₂/Al (80 nm)/MoO_x: TAPC (43 nm, 15 wt.%)/TAPC (10 nm)/Ir(piq)₃:TcTa (3 nm, 6%)/TcTa (2 nm)/FIrpic:26DCzPPy (5 nm, 12 wt.%)/BPhen (2 nm)/PO-01:26DCzPPy (5 nm, 6 wt.%)/BPhen* (40 nm)/Cs₂CO₃ (1 nm)/Al (2 nm)/Cu (18 nm)/TcTa (60 nm) [3]
Colour	White
EQE @ 1000 cd/m²	10%
Current Efficiency @ 1000 cd/m²	25.6 cd/A
Power Efficiency @ 1000 cd/m²	20.1 lm W⁻¹

Device structure	ITO/MoOx (2 nm)/m-MTDATA: MoOx (30 nm, 15 wt.%)/m-MTDATA(10 nm)/Ir(ppz)₃ (10 nm)/CBP:PO-01* (3 nm, 6 wt.%)/Ir(ppz)₃(1 nm)/DBFDPOPhCz:FIrpic (10 nm,10 wt.%)/Bphen* (36 nm)/LiF(1 nm)/Al [4]
Colour	White
Max. EQE	12.2%
Max. Current Efficiency	42.4 cd/A
Max. Power Efficiency	47.6 lm W⁻¹

Device structure	ITO/NPB (30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen(35 nm)/LiF (1 nm)/CoPc:C60 (4:1) (5 nm)/MoO₃(5 nm)/NPB(30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen (35 nm)/Mg:Ag (100 nm) [5]
Colour	Yellow
Max. EQE	16.78%
Max. Luminance	42,236 cd/m²
Max. Current Efficiency	50.2 cd/A
Max. Power Efficiency	12.9 lm W⁻¹

Device structure	ITO/NPD* (40 nm)/9%-Ir(piq)₃:CBP (20 nm)/BPhen (50 nm)/KF (1 nm)/Al [6]
Colour	Red
Max. Luminance	11,000 cd/m²
Max EQE	10.3%
Max. Powder Efficiency	8.0 lm W⁻¹

Device structure	ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)₃ doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [7]
Colour	Green
Luminance @ 15 V	1,320 cd/m²
Power Efficiency @ 14 V	56.6 lm W^-1
Current Efficiency @ 14 V	23.17 cd/A

Device structure	ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [8]
Colour	Red
Luminance @ 10 mA/cm²	1,790 cd/m²
Power Efficiency @ 10 mA/cm²	4.65 lm W⁻¹
Current Efficiency @ 10 mA/cm²	18.0 cd/A

Device structure	ITO/ NPB (70 nm)/DPVBi:BCzVBi (15 wt%, 15 nm)/ADN:BCzVBi (15% wt%, 15 nm)/BPhen (30 nm)/ Liq (2 nm)/Al (100 nm) [9]
Colour	Deep Blue
Max. Luminance	8,668 cd/m²
Max. Current Efficiency	5.16 cd/A

Device structure	ITO/m-MTDATA:MoO_x (3:1, 15 nm)/m-MTDATA (30 nm)/NPB (5 nm)/Alq₃ (50 nm)/BPhen (10 nm)/LiF (1 nm)/Al (100 nm) [10]
Colour	Green
Max. Luminance	42,090 cd/m²
Max. Current Efficiency	4.77 cd/A
Max. Power Efficiency	3.5 lm W⁻¹

Device structure	ITO/MoO₃ (5 nm)/ NPB (35 nm)/CBP (5 nm)/DPVBi (I) (10 nm)/CBP:Rubrene (4:1) (3 nm)/DPVBi (II) (30 nm)/CBP (HBL3) (2 nm)/BPhen (10 nm)/LiF/Al [11]
Colour	White
Max. Luminance	2,650 cd/m²
Max. Current Efficiency	4.6 cd/A

Device structure	ITO/MoO₃ (5 nm)/ NPB (35 nm)/CBP (5 nm)/DPVBi (I) (10 nm)/CBP:Rubrene (4:1) (3 nm)/DPVBi (II) (30 nm)/CBP (HBL3) (2 nm)/BPhen (10 nm)/LiF/Al [12]
Colour	White
Max. Luminance	12,100 cd/m²
Current Efficiency @ 11 V	5.03 cd/A

Device structure	ITO/NPB/DPVBi:BCzVBi-6%/MADN:DCM2-0.5%/Bphen/Liq/Al [13]
Colour	White
Max. Luminance	15,400 cd/m²
Max. Current Efficiency	6.19 cd/A

Pricing

Grade	Order Code	Quantity	Price
Sublimed (>99.0% purity)	M961	1 g	£200
Sublimed (>99.0% purity)	M961	5 g	£700

MSDS Documentation

BPhen MSDS sheet

Literature and Reviews

Highly Power Efficient Organic Light-Emitting Diodes with a p-Doping Layer, C-C. Chang et al., Appl. Phys. Lett., 89, 253504 (2006); doi: 10.1063/1.2405856.
Pure White Organic Light-Emitting Diode with Lifetime Approaching the Longevity of Yellow Emitter, J-H. Jou et al., ACS Appl. Mater. Interfaces, 3, 3134–3139 (2011). dx.doi.org/10.1021/am2006383.
Exceedingly efficient deep-blue electroluminescence from new anthracenes obtained using rational molecular design, S-K. Kim et al., J. Mater. Chem., 18, 3376–3384 (2008). DOI: 10.1039/B805062G.

Highly efficient and color-stable white organic light-emitting diode based on a novel blue phosphorescent host, Q. Wu et al., Syn. Metals 187, 160– 164 (2014); http://dx.doi.org/10.1016/j.synthmet.2013.11.010.
Effect of bulk and planar heterojunctions based charge generation layers on the performance of tandem organic light-emitting diodes, Z. Ma et al., Org. Electronics, 30, 136-142 (2016). doi:10.1016/j.orgel.2015.12.020
Homoleptic Cyclometalated Iridium Complexes with Highly Efficient Red Phosphorescence and Application to Organic Light-Emitting Diode, A. Tsuboyama et al., J. Am. Chem. Soc., 125, 12971-12979 (2003). DOI: 10.1021/ja034732d.
Novel organic electron injection layer for efficient and stable organic light emitting diodes, R. Grover et al., J. Luminescence, 146, 53–56 (2014). http://dx.doi.org/10.1016/j.jlumin.2013.09.004.
Light outcoupling efficiency enhancement in organic light emitting diodes using an organic scattering layer, R. Grover et al., Phys. Status Solidi RRL 8 (1), 81–85 (2014). DOI: 10.1002/pssr.201308133.
Highly efficient blue organic light-emitting diodes using dual emissive layers with host-dopant system, B. Lee et al., J. Photon. Energy. 3(1), 033598 (2013), doi:10.1117/1.JPE.3.033598.
Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminumbased organic light-emitting diodes with a MoOx p-doping layer, G. Xie et al., Appl. Phys. Lett., 92, 093305 (2008); doi: 10.1063/1.2890490.
Enhancing Color Purity and Stable Efficiency of White Organic Light Diodes by Using Hole-Blocking Layer, C-J. Huang et al., J. Nanomater., 2014; dio: 10.1155/2014/915894.
Efficient white organic light-emitting diodes based on a balanced split of the exciton-recombination zone using a graded mixed layer as an electron-blocking layer, C. K. Kim et al., J. Soc. Info. Display, 18 (1), 97-102 (2012).
High efficient white organic light-emitting diodes using BCzVBi as blue fluorescent dopant, Y. Kim et al., J Nanosci. Nanotechnol., 8(9), 4579-83 (2008).