Hexagonal Boron Nitride (h-BN) Film

CAS Number 10043-11-5

2D Materials, Hexagonal Boron Nitride, Low Dimensional Materials, Materials

MSDS

Hexagonal Boron Nitride (h-BN) Film CAS 10043-11-5

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Low price, high purity 2D hexagonal boron nitride (h-BN) film

Suitable for the creation of single or few-layer sheets via mechanical or liquid exfoliation

Technical Data | MSDS | Literature and Reviews

Hexagonal boron nitride (h-BN) (CAS number 10043-11-5) has a honeycomb structure based on sp² covalent bonds similar to graphene. Due to the similarity it is also known as “white graphene”. Unlike graphene, h-BN exhibits a wide band gap. This band gap uniquely transitions from indirect in its bulk form to direct when reduced to a monolayer.

High Purity

High purity ≥99.99% Hexagonal Boron Nitride Crystal

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Low price Hexagonal Boron Nitride (h-BN)

Ultrathin Films

Available in monolayer and few-layer films

h-BN is considered an insulator, and is used as a sub-layer material for any other 2D material in electronic devices. However, it has exotic opto-electronic properties (e.g. wide bandgap and low dielectric constant) along with mechanical robustness, high thermal conductivity and chemical inertness. h-BN is widely used as a dielectric substrate in electronic and optical devices for graphene and other 2D-layered semiconductors (e.g. transition metal dichalcogenides TMDs).

2D h-BN has no absorption in the visible range, but has absorption in the ultraviolet region with good photoluminescence.

Hexagonal boron nitride (h-BN) few-layer film, often referred to as h-BN nanosheets (h-BNNs), has an ultra-flat surface without dangling bonds. Due to its oxidation resistance even at high temperatures (up to 1000 ^oC) and chemical resistance to both acids and bases, it is believed to be a better substrate than silicon.

*Custom made size and substrates are also available

Glass (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
Sapphire (1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
Silicon (1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
Quartz (1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
Copper (5 cm × 10 cm or custom-made sizes)

Technical Data

CAS Number	10043-11-5
Full Name	Hexagonal boron nitride
Chemical Formula	BN
Molecular Weight	24.82 g/mol
Preparation	Synthetic - Chemical Vapour Transport (CVT)
Structure	Hexagonal (2H)
Electronic Properties	2D Materials - insulator/semiconductor
Melting Point	‎‎2,973 °C (sublimates)
Colour	Colourless
Synonyms	White graphene, hexagonal BN, h-BN
Classification / Family	2D materials, Organic electronics, Materials science
Purity	≥99%

Monolayer Film

Substrate	SiO₂/Si	PET	Sapphire	Quartz
Product Code	M2161F11	M2162F11	M2319F11	M2320F11
Size	1 cm × 1 cm*	1 cm × 1 cm*	1 cm × 1 cm*	1 cm × 1 cm*
Growth Method	CVD synthesis	CVD synthesis	CVD synthesis	CVD synthesis
Appearance	Transparent	Transparent	Transparent	Transparent
Purity	>99%	>99%	>99%	>99%
Transparency	>97%	>97%	>97%	>97%
Coverage	>95%	>95%	>95%	>95%
Number of Layers	1	1	1	1
Sheet Resistance	n.a.	n.a.	n.a.	n.a.
Transfer method	Wet chemical transfer	Wet chemical transfer	Wet chemical transfer	Wet chemical transfer
Substrate Thickness	300 m (oxide layer)	250 µm	300 µm	1 mm
Bandgap	Direct ~ 6 eV	Direct ~ 6 eV	Direct ~ 6 eV	Direct ~ 6 eV

Few-Layer Film

Substrate	SiO₂/Si	PET	Sapphire	Quartz
Product Code	M2163F11	M2164F11	M2321F11	M2322F11
Size	1 cm × 1 cm*	1 cm × 1 cm*	1 cm × 1 cm*	1 cm × 1 cm*
Growth Method	CVD synthesis	CVD synthesis	CVD synthesis	CVD synthesis
Appearance	Transparent	Transparent	Transparent	Transparent
Purity	>99%	>99%	>99%	>99%
Transparency	>97%	>97%	>97%	>97%
Coverage	>95%	>95%	>95%	>95%
Number of Layers	2 - 6	2 - 6	2 - 6	2 - 6
Bandgap	Indirect 5.955 eV	Indirect 5.955 eV	Indirect 5.955 eV	Indirect 5.955 eV
Sheet Resistance	n.a.	n.a.	n.a.	n.a.
Transfer method	Wet chemical transfer	Wet chemical transfer	Wet chemical transfer	Wet chemical transfer
Substrate Thickness	300 nm (oxide layer)	250 µm	300 µm	1 mm

Pricing Table

Product Code	Form	Package/Substrates*	Price
M2161F11	Monolayer Films	SiO₂/Si - 1 Each	£200
M2161F11	Monolayer Films	SiO₂/Si - 2 Each	£340
M2162F11	Monolayer Films	PET - 1 Each	£200
M2162F11	Monolayer Films	PET - 2 Each	£340
M2319F11	Monolayer Films	Sapphire - 1 Each	£200
M2319F11	Monolayer Films	Sapphire - 2 Each	£340
M2320F11	Monolayer Films	Quartz - 1 Each	£200
M2320F11	Monolayer Films	Quartz - 2 Each	£340
M2163F11	Few-Layer Films	SiO₂/Si - 1 Each	£200
M2163F11	Few-Layer Films	SiO₂/Si - 2 Each	£340
M2164F11	Few-Layer Films	PET - 1 Each	£200
M2164F11	Few-Layer Films	PET - 2 Each	£340
M2321F11	Few-Layer Films	Sapphire - 1 Each	£200
M2321F11	Few-Layer Films	Sapphire - 2 Each	£340
M2322F11	Few-Layer Films	Quartz - 1 Each	£200
M2322F11	Few-Layer Films	Quartz - 2 Each	£340

*typical representative size, areas/dimensions may vary

**item with a lead time of 4 - 6 weeks, please contact for more information

Shipping is free for qualifying orders.

MSDS Documents

Monolayer Film

Hexagonal boron nitride monolayer film SiO2/Si

Hexagonal boron nitride monolayer film PET

Hexagonal boron nitride monolayer film sapphire

Hexagonal boron nitride monolayer film quartz

Few-Layer Film

Hexagonal boron nitride few-layer film SiO2/Si

Hexagonal boron nitride few-layer film PET

Hexagonal boron nitride few-layer film sapphire

Hexagonal boron nitride few-layer film quartz

Literature and Reviews

Hexagonal boron nitride is an indirect bandgap semiconductor, G. Cassabois et al., Nat. Photon., 10, 262–266 (2016);DOI: 10.1038/NPHOTON.2015.277.
Graphene, hexagonal boron nitride, and their heterostructures: properties and applications, J. Wang et al., RSC Adv., 7, 16801 (2017); DOI: 10.1039/c7ra00260b.
Two dimensional hexagonal boron nitride (2D-h-BN): synthesis, properties and applications, K. Zhang et al., J. Mater. Chem. C, 5, 11992 (2017); DOI: 10.1039/c7tc04300g.

Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing, J. Bao et al., Electron. Mater. Lett., 12, 1-16 (2016), DOI: 10.1007/s13391-015-5308-2.
Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications, Q. Weng et al., Chem. Soc. Rev., 45, 3989-4012 (2016); DOI:10.1039/C5CS00869G.
Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al., Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606 .
Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets, G. Bhimanapati et al., anoscale, 6, 11671-11675 (2014); DIO: 10.1039/C4NR01816H.
Large Scale Thermal Exfoliation and Functionalization of Boron Nitride, Z. Cui et al., small, 10 (12), 2352–2355 (2014); DOI: 10.1002/smll.201303236.
White Graphene undergoes Peroxidase Degradation, R. Kurapati et al., Angew.Chem., 128,5596 –5601 (2016); DOI:10.1002/anie.201601238.
Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets, J. Wang et al., Nanoscale, 7, 1718-1724 (2015); DOI: 10.1039/C4NR04445B.
Monolayer to Bulk Properties of Hexagonal Boron Nitride, D. Wickramaratne et al., J. Phys. Chem. C, 122 (44), 25524–25529 (2018); DOI: 10.1021/acs.jpcc.8b09087.
Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al, Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606.
Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride, K. Ba et al., Sci. Rep., 7, 45584 (2017); DOI: 10.1038/srep45584.
Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains, Q. Wu et al., Sci. Rep., 5, 16159 (2015); DOI: 10.1038/srep16159,
Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition, R. Chang et al., Chem. Mater. 2017, 29, 6252−6260 (2017); DOI: 10.1021/acs.chemmater.7b01285.
Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films, P Sutter et al., Nano Lett. 2013, 13, 276−281 (2013); DIO: 10.1021/nl304080y.
High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride, H, Liu et al., Nanoscale, 10, 5559–5565 (2018); DOI: 10.1039/c7nr09438h .
Pressure-Dependent Growth of Wafer-Scale Few-layer h‑BN by Metal−Organic Chemical Vapor Deposition, D. Kim et al., Cryst. Growth Des., 17, 2569−2575 (2017); DOI: 10.1021/acs.cgd.7b00107.
Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets, J. Nanomater., 30429 (2015); doi: 10.1155/2015/304295.
Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition, J. Liu et al., Molecules, 21, 1636 (2016); doi:10.3390/molecules21121636.
Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy, APL Mater. 2, 092502 (2014); doi.org/10.1063/1.4889815.
Vacuum-Ultraviolet Photodetection in Few-Layered h‑BN,W. Zheng et al., ACS Appl. Mater. Interfaces, 10, 27116−27123 (2018); DOI: 10.1021/acsami.8b07189.

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Hexagonal Boron Nitride

2D Materials

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Hexagonal Boron Nitride (h-BN) Film

Low price, high purity 2D hexagonal boron nitride (h-BN) film

Technical Data

Monolayer Film

Few-Layer Film

Pricing Table

MSDS Documents

Monolayer Film

Few-Layer Film

Literature and Reviews

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